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Charge trap flash ( CTF) is a semiconductor memory technology used in creating non-volatile NOR and NAND flash memory. It is a type of floating-gate MOSFET memory technology, but differs from the conventional floating-gate technology in that it uses a silicon nitride film to store electrons rather than the doped polycrystalline silicon typical ...
V-NAND uses a charge trap flash geometry (which was commercially introduced in 2002 by AMD and Fujitsu) [44] that stores charge on an embedded silicon nitride film. Such a film is more robust against point defects and can be made thicker to hold larger numbers of electrons. V-NAND wraps a planar charge trap cell into a cylindrical form. [83]
The floating-gate MOSFET ( FGMOS ), also known as a floating-gate MOS transistor or floating-gate transistor, is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) where the gate is electrically isolated, creating a floating node in direct current, and a number of secondary gates or inputs are deposited above the floating ...
nvSRAM ZMD UL634H256SC. nvSRAM is a type of non-volatile random-access memory (NVRAM). [1] [2] nvSRAM extends the functionality of basic SRAM by adding non-volatile storage such as an EEPROM to the SRAM chip. In operation, data is written to and read from the SRAM portion with high-speed access; the data in SRAM can then be stored into or ...
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N. Non-volatile random-access memory. Nonvolatile BIOS memory. NOR flash replacement. NvSRAM.
Flash memory – solid-state drive (SSD), memory cards (such as SD card and microSD), USB flash drive, charge trap flash (CTF) Memory cells – memory chips, data storage, data buffer, code storage, embedded logic, embedded memory, main memory; Memory registers – shift register
Have backup power for cell phones that do not require charging. Have a first aid kit ready and accessible. Never drive into areas with flowing water; it takes less than 10 inches to wash a car away.